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| Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Durchlastrom Grenzeffektivwert proChip Forward current RMS maximum per Chip Stostrom Grenzwert surge forward current Grenzlastintegral I t - value 2 Tvj = 25C TC = 80C TC = 80C tP = 10 ms, T vj = tP = 10 ms, T vj = 25C 25C VRRM IRMSmax IFRMSM IFSM I2 t 1600 75 V A A A A A2s A2s tP = 10 ms, T vj = 150C tP = 10 ms, T vj = 150C Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I2t - value Tvj = 25C Tc = 80 C TC = 25 C tP = 1 ms, TC = 25C Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage w w w t a .D tP = 1 ms S a e h T C = 80 C U t4 e VCES IC,nom. IC ICRM Ptot VGES IF IFRM 2 It .c m o 50 315 500 260 340 1200 40 55 80 200 +/- 20V V A A A W V 40 80 320 A A A2s VR = 0V, tp = 10ms, Tvj = 125C Tvj = 25C TC = 80 C TC = 25 C tP = 1 ms, TC = 80C TC = 25C VCES IC,nom. IC ICRM Ptot VGES 1200 40 55 80 200 +/- 20V V A A A W V Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Andreas Schulz approved by: Robert Severin tP = 1 ms IF IFRM 15 date of publication:23.04.2002 revision: 2 1(11) w w w .D ta a Sh 30 ee 4U t om .c A A DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Tvj = 150C, Tvj = 150C Tvj = 150C Tvj = 150C, V R = 1600 V I F = 40 A VF V(TO) rT IR RAA'+CC' min. - typ. 1,2 2 4 max. 0,8 10,5 V V m mA m Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data VCE = VGE, Tvj = 25C, min. IC = IC = IC = 40 A 40 A 1,5 mA VGE(TO) Cies 1200 V ICES IGES 600 V 27 Ohm 27 Ohm 600 V 27 Ohm 27 Ohm 600 V 27 Ohm 27 Ohm 600 V 27 Ohm 27 Ohm 600 V 27 Ohm 45 nH 600 V 27 Ohm 45 nH 27 Ohm 720 V ISC Eoff Eon tf td,off tr td,on VCE sat 5,0 - typ. 1,8 2,15 5,8 2,5 - max. 2,3 6,5 5 400 V V V nF mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 25C, V CE = VCE = 0V, VGE =20V, Tvj =25C IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = VGE = 15V, Tvj = 25C, R G = VGE = 15V, Tvj = 125C, R G = IC = INenn, V CC = L = V CC = L = RG = VCC = VGE = 15V, Tvj = 125C, R G = IC = INenn, 85 90 30 45 420 520 65 90 6 - ns ns ns ns ns ns ns ns mWs VGE = 15V, Tvj = 125C, R G = tP 10s, VGE 15V, Tvj125C, 4,2 - mWs 160 - A 2(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip TC = 25C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy LCE RCC'+EE' - typ. 7 max. 60 nH m min. VGE = 0V, Tvj = 25C, VGE = 0V, Tvj = 125C, IF=INenn, IF = IF = 40 A 40 A 900 A/s 600 V 600 V 900 A/s 600 V 600 V 900 A/s 600 V 600 V Erec Qr IRM VF - typ. 1,75 1,75 39 38 4,2 7,8 1,35 2,8 max. 2,3 V V A A As As mWs mWs - diF/dt = VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25C, V R = VGE = -10V, Tvj = 125C, V R = Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut off current Gate-Emitter Reststrom gate-emitter leakage current Schaltverluste und -bedingungen Switching losses and conditions VCE = VGE, Tvj = 25C, min. IC = IC = IC = 40 A 40 A 1,5 mA VGE(TO) Cies 1200 V ICES IGES VCE sat 5,0 - typ. 1,8 2,15 5,8 2,5 5,0 - max. 2,3 6,5 500 400 V V V nF mA nA f = 1MHz, Tvj = 25C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 25C, V CE = VCE = 0V, VGE = 20V, Tvj = 25C siehe Wechselrichter in diesem Datenblatt see inverter in this datasheet Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25C, Durchlaspannung forward voltage Tvj = 125C, Schaltverluste und -bedingungen Switching losses and conditions NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value min. IF = IF = 40 A 40 A VF - typ. 2,35 2,55 max. 2,8 V V siehe Wechselrichter in Dbl FP15R12KE3 see inverter in datasheet FP15R12KE3 min. TC = 25C TC = 100C, R 100 = 493 TC = 25C R2 = R1 exp [B(1/T2 - 1/T1)] R25 R/R P25 B25/50 -5 typ. 5 max. 5 20 k % mW K 3375 3(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Trans. Bremse/ Trans. Brake Diode Bremse/ Diode Brake Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter Tvj Top Tstg Paste=1W/m*K grease=1W/m*K typ. 0,04 0,02 0,04 - max. 1 0,6 0,95 0,6 1,5 150 125 125 K/W K/W K/W K/W K/W K/W K/W K/W C C C RthJC - RthCK -40 -40 Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Gewicht weight Luftstrecke clearance Kriechstrecke creeping distance Pin-Erde Pin-GND Pin-Erde Pin-GND Schraube M 5 screw M 5 G 300 7,5 10 g mm mm M 3 Al2O3 225 6 Nm Transiente Thermische Eigenschaften / Transient Thermal properties IGBT-Wechselrichter IGBT-Inverter ri [K/W] 1 2 3 4 6,769E-02 1,052E-01 2,709E-01 1,523E-01 i [s] 2,345E-03 2,820E-01 2,820E-02 1,128E-01 Diode-Wechselrichter Diode-Inverter ri [K/W] 9,674E-02 6,249E-01 1,800E-01 5,701E-02 i [s] 3,333E-03 3,429E-02 1,294E-01 7,662E-01 4(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 80 70 60 50 Tvj = 25C Tvj = 125C IC [A] 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 80 Vge=19V 70 60 50 Vge=17V Vge=15V Vge=13V Vge=11V Vge=9V IC = f (VCE) Tvj = 125C IC [A] 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] 5(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G IC = f (VGE) VCE = 20 V Ubertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) 80 70 60 Tvj=25C 50 Tvj=125C IC [A] 40 30 20 10 0 0 2 4 6 8 10 12 14 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) 80 70 Tvj = 25C 60 50 Tvj = 125C IF = f (VF) IF [A] 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 VF [V] 6(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G Eon = f (IC), Eoff = f (IC), Erec = f (IC) Tj = 125C, V GE = 15 V, VCC = 600 V 27 Ohm Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 16 14 12 10 8 6 4 2 0 0 10 20 30 RGon = RGoff = Eon Eoff Erec E [mWs] 40 50 60 70 80 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 10 9 8 7 Eon Eoff Erec Eon = f (RG), Eoff = f (RG), Erec = f (RG) Tj = 125C, V GE = +-15 V , I c = Inenn , VCC = 600 V E [mWs] 6 5 4 3 2 1 0 0 10 20 30 40 50 60 RG [] 7(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G Z thJC = f (t) Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter 1 Zth-IGBT Zth-FWD ZthJC [K/W] 0,1 Ri und ti-Werte siehe S. 4 Ri and ti-Values see P. 4 0,01 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich IGBT-Wechselr. (RBSOA) Reverse bias save operating area (RBSOA) VGE = 15V, 90 80 70 60 50 IC,Modul IC,Chip T j = 125C IC [A] 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE [V] 8(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) Output characteristic brake-chopper-IGBT (typical) 80 70 Tvj = 25C 60 50 Tvj = 125C IC [A] 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 VCE [V] Durchlakennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) Forward characteristic of brake-chopper-FWD (typical) 80 70 60 Tvj = 25C 50 Tvj = 125C IF [A] 40 30 20 10 0 0 0,5 1 1,5 2 2,5 3 3,5 4 VF [V] 9(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G IF = f (VF) Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) 80 70 60 Tvj = 25C 50 Tvj = 150C IF [A] 40 30 20 10 0 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp 10000 R[] 1000 100 0 20 40 60 80 100 120 140 160 TC [C] 10(11) DB-PIM-IGBT3_2Serie.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FP40R12KE3G Schaltplan/ Circuit diagram 21 22 20 1 2 3 14 23 24 7 13 19 18 4 12 17 16 5 11 10 15 6 NTC 8 9 Gehauseabmessungen/ Package outlines Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11(11) DB-PIM-IGBT3_2Serie.xls |
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